MRF6S23100HSR5【PDF 4/11 页】MOSFET RF N-CHAN 28V 20W NI-780S

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RF Device Data

Freescale Semiconductor

MRF6S23100HR3 MRF6S23100HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

3A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA

= 25

°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS

= 68 Vdc, V

GS

= 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS

= 28 Vdc, V

GS

= 0 Vdc)

IDSS

—

—

1

μAdc

Gate-Source Leakage Current

(VGS

= 5 Vdc, V

DS

= 0 Vdc)

IGSS

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

(VDS

= 10 Vdc, I

D

= 250

μAdc)

VGS(th)

1

2

3

Vdc

Gate Quiescent Voltage

(VDD

= 28 Vdc, I

D

= 1000 mAdc, Measured in Functional Test))

VGS(Q)

2

2.8

4

Vdc

Drain-Source On-Voltage

(VGS

= 10 Vdc, I

D

= 2.2 Adc)

VDS(on)

0.1

0.21

0.3

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS

= 28 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Crss

—

1.5

—

pF

Functional Tests

(In Freescale Test Fixture, 50 ohm system) V

DD

= 28 Vdc, I

DQ

= 1000 mA, P

out

= 20 W Avg., f1 = 2390 MHz, f2 = 2400 MHz,

2- Carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3

measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

14

15.4

17

dB

Drain Efficiency

ηD

22.5

23.5

—

%

Intermodulation Distortion

IM3

-35

-37

—

dBc

Adjacent Channel Power Ratio

ACPR

-38

-40.5

—

dBc

Input Return Loss

IRL

—

-10

—

dB

Part is internally matched both on input and output.

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